Track synthesis, materials and catalysis as it is published.
Search papers, labs, and topics across Lattice.
This work establishes a thermodynamic framework to model phase stability and phase separation in amorphous silicon oxynitride ($\text{SiO}_x\text{N}_y$) thin films across varying stoichiometries and processing temperatures. By calculating Gibbs free energy minima, the authors delineate the boundary conditions and critical stoichiometric thresholds separating homogeneous single-phase oxynitrides from two-phase silicon oxide and silicon nitride mixtures. The resulting temperature-dependent phase diagram provides explicit synthesis targets to suppress or induce nanoscale phase separation for tailored thin-film properties.
Amorphous $\text{SiO}_x\text{N}_y$ does not remain uniformly mixed under arbitrary synthesis conditions: precise Gibbs energy boundaries dictate exactly when thin films spontaneously phase-separate into distinct oxide and nitride domains.
In this work, a comprehensive thermodynamic description of the formation of phases in amorphous SiOxNy (0<= x<= 2, 0<= y<= 4/3) films as a function of the film chemical composition and fabrication temperature is presented. Two possible phase states, namely homogeneous single-phase Si oxynitride and two-phase mixture of Si oxide and Si nitride phases, are analyzed in terms of the lowest values of the Gibbs free energy. The characters of the modification of the phase composition upon changing the SiOxNy stoichiometry indices and fabrication temperature are determined. Moreover, characteristic features of the chemical composition of the Si oxide and Si nitride phases in two-phase Si oxynitrides are revealed. Particular attention is given to the thermodynamic origin of the boundaries between different phase states of the SiOxNy films and to determining the critical stoichiometry values separating them. A comprehensive phase diagram indicating single- and two-phase SiOxNy regions as functions of the fabrication temperature is constructed. The peculiarities of the transitions between different SiOxNy phase states, along with underlying mechanisms, are discussed with reference to this phase diagram. The obtained results extend our understanding of the fundamental properties of Si oxynitride films and their dependence on the film fabrication conditions, and may be used for tailoring SiOxNy characteristics for practical applications.