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The authors achieve phase-selective epitaxial growth of water-soluble sacrificial strontium aluminate layers (cubic Sr3Al2O6 and tetragonal Sr4Al2O7) via sputtering deposition from a single target simply by modulating the growth atmosphere. Replacing pulsed laser deposition with scalable sputtering is a vital step toward practical, wafer-scale integration of freestanding complex oxide membranes into flexible heterostructures and neuromorphic devices. Characterization via XRD, synchrotron spectroscopy, and SQUID magnetometry confirms that the released freestanding ferromagnetic Sm2NiMnO6 membranes retain the structural and magnetic integrity of substrate-bound epitaxial films.
Scalable freestanding oxide membranes no longer depend on slow, boutique laser deposition: simply tuning the sputtering atmosphere enables phase-selective growth of water-soluble sacrificial layers from a single target.
We report the epitaxial growth of high-quality water-soluble strontium aluminate films via sputtering deposition. We systematically investigate the dependence of the films structural quality on the growth conditions and we show that we can selectively grow, using the same target, both the cubic Sr3Al2O6 and the tetragonal Sr4Al2O7 phases by varying the atmosphere during growth. Using these water-soluble sacrificial layers we then synthesize ferromagnetic freestanding Sm2NiMnO6 membranes. By means of X-ray diffraction, synchrotron spectroscopic techniques and SQUID magnetometry, we demonstrate that our freestanding films exhibit properties comparable to epitaxial films.