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This paper demonstrates a graphene double quantum dot as a solid-state two-level system operating in the THz range, achieving a transition frequency of 0.145 THz (0.6 meV) through transport spectroscopy and nonequilibrium Green's function modeling. This achievement is significant as it extends the utility of quantum two-level systems beyond microwave and optical frequencies, offering advantages for THz quantum technologies. The work provides a practical, on-chip integrable platform for THz quantum applications and the study of fundamental light-matter interactions.
Graphene double quantum dots unlock solid-state THz quantum systems, enabling single-electron transitions at 0.145 THz for novel quantum technologies.
Matter-based two-level quantum systems are fundamental building blocks of quantum technologies, underpinning applications in quantum computing, simulation, communication, and sensing. Today, most of these two-level quantum systems, including Rydberg atoms, trapped ions, superconducting circuits, molecules, and quantum dots, involve transition frequencies in microwave or optical domains. However, extending their transition frequency to the THz spectral range could provide numerous benefits, leveraging the unique properties of THz radiation. Here, we show that an hBN-encapsulated graphene double quantum dot realizes a two-level system with a transition frequency in the THz spectral range. Using low-temperature transport spectroscopy in the dark combined with modeling based on nonequilibrium Green's function formalism, we demonstrate the formation of an artificial molecule, featuring bonding and antibonding states separated by an energy of up to 0.6 meV, corresponding to a resonance frequency of 0.145 THz. This approach provides direct access to important parameters of open double quantum dot systems, including tunneling rates, offering a practical alternative to conventional techniques such as photon-assisted tunneling, which are challenging to implement at THz frequencies. The realized 2D-material-based THz two-level system, compatible with direct on-chip integration, could serve as a key building block for future THz quantum technologies. Furthermore, by involving a single-electron transition, coupling these devices to a THz resonator could enable the exploration of ultra-strong light-matter interactions at the fundamental limit of a single transition coupled to a single cavity, beyond the reach of existing THz quantum systems based on collective transitions.