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We derive exact exciton-phonon scattering selection rules for mirror-symmetric monolayers by combining group theory with \textit{ab initio} many-body perturbation theory, revealing how exciton mirror parity dictates allowed phonon interactions across the Brillouin zone. These rules are then applied to compute exciton linewidths and simulate real-time relaxation dynamics via the Boltzmann transport equation, validated against experimental data for GaN and hBN. The parity of the lowest exciton band exhibits a contour-dependent transition, fundamentally influencing relaxation pathways.
Exciton relaxation pathways in 2D materials are not arbitrary; exact selection rules derived from mirror symmetry precisely dictate which phonon modes are accessible.
Symmetry governs which exciton-phonon (\textit{exc-ph}) scattering channels \textit{can} exist, but not which a relaxing exciton actually uses. Combining group theory with \textit{ab initio} many-body perturbation theory, we derive the mirror parity $σ_h$, of finite-momentum excitons in planar $D_{3h}$ monolayers, and form exact \textit{exc-ph} selection rules that hold across the whole Brillouin zone. The parity of the lowest exciton band changes across a closed contour. The even phonons connect states of the same parity, while odd phonons connect states of opposite parity. We use these rules to compute exciton linewidths and we solve the real-time Boltzmann transport equation for monolayer GaN as the test case and benchmark it against monolayer \textit{h}BN.