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The authors characterize the thermodynamic states and displacement field-induced band gap of an encapsulated bilayer graphene heterostructure by coupling a lumped-element LC resonator directly to its top-gate electrode for high-frequency reflectometry. This gate-level capacitive sensing bypasses the disorder-induced percolation channels that routinely distort conventional DC transport measurements, enabling unambiguous detection of bulk insulating states and fine-angle moiré alignment. Supported by an analytical capacitance network model, the method establishes a non-invasive, multiplexable framework for extracting layer polarizability and tracking fragile quantum states in van der Waals materials.
Bypassing the percolation artifacts and edge disorder that plague DC transport, gate-level RF reflectometry provides a high-bandwidth, bulk-sensitive window into correlated gaps and subtle moiré alignments in 2D heterostructures.
In the search for topological states in bilayer graphene, capacitance measurement methods are widely utilized in bridge type readouts or source-drain reflectometry setups. In this paper we demonstrate an alternative readout method based on gate reflectometry. We probe the capacitance of a BLG flake encapsulated between hBN and WSe$_2$ through a lumped-element LC resonator coupled to the top gate electrode of the heterostructure. The microwave readout reliably tracks the opening of a displacement field-induced band gap in the device. Compared to simultaneous DC transport measurements, the RF signal proves to be less affected by the percolating transport channels caused by sample disorder. Furthermore, we use the gate based readout to identify a small-angle alignment between the hBN and BLG flake. From the fixed frequency microwave readout, we extract the device capacitance change between the insulating and metallic state of the bilayer and utilize a comprehensive capacitance network model to explain its origin. Finally, we propose an advanced, multiplexed double-resonator readout scheme capable of simultaneously measuring top and bottom gate capacitances to extract the layer polarizability of the system. This work establishes gate reflectometry as a highly scalable and powerful methodology for exploring topological phases and internal charge dynamics in van der Waals heterostructures.