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The authors synthesize high-quality $\delta$-phase niobium nitride (NbN) superconducting thin films at room temperature using magnetron sputtering coupled with an energy-selective ion beam that decouples ion energy from ion flux. Stabilizing this metastable superconducting phase under low-temperature, CMOS-compatible thermal budgets addresses a critical hardware scaling barrier for integrated quantum-classical processors. Transport and structural characterization reveal significantly narrower superconducting transition widths and superior electronic homogeneity compared to standard reactive sputtering.
Decoupling ion energy from flux unlocks room-temperature, CMOS-compatible synthesis of $\delta$-NbN superconductors with sharper transition widths, removing a primary thermal bottleneck for on-chip quantum integration.
Achieving high-quality superconducting thin films at low temperatures is a central challenge for scalable quantum device integration and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible fabrication. Here, we demonstrate a room-temperature magnetron sputtering approach for synthesizing niobium nitride (NbN) thin films using a novel energy-selective ion source that enables independent control of ion energy and ion flux. This capability provides a powerful route to precisely tailor surface kinetics and crystallization pathways, overcoming longstanding limitations in stabilizing high-quality NbN at reduced temperatures. The resulting films were characterized by superconducting transport measurements, X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Compared with conventional reactive sputtering, ion beam-assisted growth yields a substantial narrowing of the transition width at the superconducting temperature, indicating improved phase purity and electronic homogeneity. Furthermore, this work introduces energy-selective ion control as a general, non-equilibrium route to stabilize metastable superconducting phases at low temperatures, offering a new design paradigm for thin-film quantum materials.