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To overcome the experimental challenge of quantizing the layer Hall effect in topological antiferromagnetic thin films like MnBi$_2$Te$_4$, this work theoretical models the integration of electrostatic moiré control layers. The resulting superlattice potential generates an emergent layer-$U(1)$ gauge field with opposing pseudomagnetic fields on the top and bottom surfaces, yielding a vanishing net Hall conductance alongside a precisely quantized layer Hall conductance of $e^2/h$. This architecture enables deterministic switching into a layer-polarized quantum anomalous Hall phase via weak gate electric fields or asymmetric single-layer gating, establishing a viable route to dissipationless layer-locked transport.
Electrostatic moiré superlattices can quantize the elusive layer Hall effect to $e^2/h$ in topological antiferromagnets through emergent pseudomagnetic gauge fields, unlocking electrically switchable, dissipationless edge channels.
Even-layer topological antiferromagnetic thin films such as MnBi$_2$Te$_4$ exhibit an unconventional layer Hall effect (LHE) arising from a layer-locked Berry curvature. This effect manifests as a layer-polarized anomalous Hall effect that can be controlled by a vertical displacement field. However, achieving a quantized version of the LHE remains experimentally challenging. In this work, we propose that moiré engineering, using an electrostatic superlattice potential from control layers, can realize the quantum layer Hall effect (QLHE). Specifically, by placing moiré control layers in close proximity to the surfaces of a MnBi$_2$Te$_4$ thin film without breaking $PT$ symmetry, the resulting system exhibits a vanishing net Hall conductance but a quantized layer Hall conductance of $e^2/h$. A weak gate electric field then breaks $PT$ symmetry and drives the system into a layer-polarized quantum anomalous Hall (QAH) phase. Furthermore, when a single control layer is introduced on only one surface, the layer-polarized QAH emerges even in the absence of an external electric field. We identify the microscopic origin of the QLHE as an emergent layer-$U(1)$ gauge field generated by the scalar moiré potential, which in turn produces opposite periodic pseudomagnetic fields on the top and bottom layers. Our work provides a feasible pathway toward realizing the QLHE in antiferromagnetic thin films.