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This paper introduces a monolithic-3D (M3D) 6T SRAM design at the 2nm technology node, which incorporates BEOL IGO pass-gates and an all-silicon nanosheet latch to enhance performance. By employing TCAD simulations calibrated to a double-gate IGO transistor and utilizing a novel neighbor-cell shared source/drain bitline design, the SRAM achieves a 25% reduction in footprint while maintaining a robust static noise margin across various supply voltages. The design also demonstrates significant performance improvements at the subarray level, with a 42.2% reduction in write delay and a 9.7% decrease in energy-delay product compared to existing high-density silicon baselines.
Achieving a 25% footprint reduction while enhancing performance metrics positions this SRAM design as a game-changer for future memory technologies at the 2nm node.
We propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO$_2$/ZrO$_2$/HfO$_2$ (HZH) gate stack is combined with virtual fabrication and 3D parasitic extraction to realize the first process-aware layout of this topology. A novel neighbor-cell shared source/drain (S/D) bitline (BL) design enlarges the IGO contact area to mitigate contact resistance and restore PG drive without area penalty. The resulting cell achieves a 25\% footprint reduction vs the high-performance (HP) 122 Si baseline while maintaining robust static noise margin (SNM) over a wide supply voltage range. At the 128$\times$256 subarray-level, it reduces write delay by 42.2\% and EDP by 9.7\% compared to the high-density (HD) 111 Si baseline, owing to reduced cell parasitics and wordline (WL) loading from the smaller footprint.
