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This study introduces a band-avoiding occupation-constrained density functional theory (ba-occ-DFT) method to address the band gap problem in density functional theory (DFT), particularly for narrow-gap semiconductors like indium arsenide (InAs). By preventing spurious occupation of band-edge states, ba-occ-DFT allows for accurate total energy calculations of atomic defects, even when the DFT band gap is effectively zero. The results demonstrate that this approach successfully separates band-edge errors from defect level calculations, enabling reliable predictions of defect levels in materials traditionally hindered by the band gap issue.
ba-occ-DFT reveals that even with a zero DFT band gap, we can achieve accurate defect level predictions in narrow-gap semiconductors.
Density functional theory (DFT) underestimates the experimental band gap---the infamous band gap problem. As the band gap defines the energy scale of defect levels, this complicates computation of charge transition energies for atomic defects. In the extreme case of narrow-gap semiconductors, the DFT band gap collapses to zero, seemingly precluding quantitative predictions of defect levels. We present a band-avoiding occupation-constrained DFT (ba-occ-DFT) approach that prevents spurious occupation of band-edge states and enables reliable total energy calculations of atomic defects. Application to indium arsenide (InAs) shows that ba-occ-DFT circumvents the band gap problem, separates band-edge errors from defect level calculations, and enables rigorous defect level predictions in a narrow-gap semiconductor despite a zero DFT band gap.
