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This paper introduces ORRAM, a standard-cell-based memory generator integrated into the OpenROAD framework, designed to streamline the ASIC design process by eliminating the need for custom bitcells or external tools. By leveraging a standard cell library, ORRAM generates fully placed and routed RAM blocks with extensive configurability, including support for various word sizes and multi-port read configurations, while ensuring timing verification through OpenSTA. Evaluated on the SkyWater 130nm process, ORRAM achieves comparable bit density to existing solutions while significantly enhancing functionality and compatibility across standard cell libraries.
ORRAM achieves the same bit density as traditional DFFRAMs but with a vastly superior feature set and no reliance on custom components.
Memory inference remains a significant challenge in turnkey ASIC design flows. Inferring flip-flops from RTL can create thousands of densely interconnected instances which dramatically slow down design flows and impede performance. Memory compilers address this issue, although they are third-party tools which are often PDK-specific and may require specialized cells not in the base PDK. To address these shortcomings, we present ORRAM, a standard-cell-based memory generator built as a native module within OpenROAD. Given a standard cell library, ORRAM produces a fully placed and routed RAM block requiring no custom bitcells or external tooling, with timing verification via OpenSTA rather than SPICE simulation. ORRAM supports arbitrary word sizes, word counts, mask granularities, multi-port read configurations, column muxing, latch-based storage, and automatic PDK-agnostic cell selection, making it compatible with most standard cell libraries including sky130hd and NanGate45. Evaluated on SkyWater 130nm, ORRAM matches the bit density of historical DFFRAM results while offering a significantly expanded feature set. The source code is available as part of the OpenROAD project.
