Search papers, labs, and topics across Lattice.
This study presents a defect-free model of amorphous silicon (a-Si) generated through machine-learning-driven molecular dynamics simulations, which accurately captures the electronic bandgap observed experimentally. By comparing this ideal model with traditional bond-switching approaches and other approximants, the authors demonstrate its superiority in reproducing key electronic properties. The findings establish a robust framework for further investigations into the optical properties and transport mechanisms of a-Si, enhancing our understanding of this critical material.
An ideal model of amorphous silicon reveals a pristine electronic structure that aligns perfectly with experimental observations, challenging traditional approximations.
Amorphous silicon (a-Si) is understood to be the canonical continuous random network material, ideally defined by fully fourfold coordination. Here, we show that a defect-free ('ideal') model of a-Si from machine-learning-driven molecular-dynamics simulations [L. A. M. Rosset et al., Nat. Commun. 16, 2360 (2025)], subsequently evaluated with hybrid-level density-functional theory computations, can accurately reproduce the experimentally observed electronic bandgap. We compare this model with one resulting from the Wooten-Winer-Weaire (WWW) bond-switching approach and with other recent approximants to ideal a-Si. More broadly, our work provides a platform for studies of band tails, optical properties, and transport in a-Si.
