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This paper introduces a novel design methodology for three-port Doherty power amplifiers (PAs) that leverages deep convolutional neural networks (CNNs), pixelated layout representations, and genetic algorithms (GA) to optimize performance under varying power conditions. The approach successfully integrates load modulation, impedance matching, and phase compensation, resulting in two GaN HEMT PA prototypes that exceed 44.2 dBm in saturated output power and achieve peak drain efficiency above 71.2% across a frequency range of 2.6-2.8 GHz. Additionally, the prototypes demonstrate impressive performance at 6-dB back-off levels and maintain an adjacent channel leakage ratio (ACLR) better than -51.3 dBc after digital predistortion, showcasing the effectiveness of the proposed design methodology.
Achieving over 71% peak drain efficiency in Doherty amplifiers using a groundbreaking deep learning approach could redefine power amplifier design.
The output combiner of a Doherty power amplifier (PA) integrates load modulation, impedance matching, and phase compensation within a single network, making its design and synthesis highly challenging. In this paper, we propose a three-port Doherty combiner design methodology that combines deep convolutional neural networks (CNNs), pixelated layout representations, and genetic algorithms (GA) with dual-state impedance synthesis to address both peak and back-off power conditions. As a proof of concept, two GaN HEMT Doherty PA prototypes incorporating three-port pixelated combiners are designed and fabricated. Both prototypes achieve a measured saturated output power exceeding 44.2 dBm with peak drain efficiency above 71.2% within 2.6-2.8 GHz. Furthermore, a drain efficiency as high as 64% is measured at the 6-dB back-off level. After applying digital predistortion, each prototype achieves an adjacent channel leakage ratio (ACLR) better than -51.3 dBc.
