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MCFlash enables in-situ bitwise operations within commercial 3D NAND flash memory by exploiting MLC data encodings and dynamically adjusting read reference voltages using standard user-mode instructions. This approach achieves error-free computation on fresh blocks and maintains low bit-error rates even after extensive P/E cycling, demonstrating its robustness. The work showcases the feasibility of using existing flash memory hardware for computation, opening new avenues for efficient data processing.
Run billions of bitwise operations directly in your 3D NAND flash, error-free, using just standard instructions.
This paper presents MCFlash, a practical and immediately deployable technique for executing bulk bitwise operations directly within commercial off-the-shelf(COTS) 3D NAND flash chips. MCFlash relies solely on standard user-mode instructions, combining Multi-Level Cell (MLC) data encodings with dynamically tuned read reference voltages to execute in-place bitwise operations. We evaluate MCFlash across diverse NAND flash chips, both floating-gate and charge-trap variants, from different generations. Our results represent the first demonstration of error-free, on-chip bitwise operations, sustaining over one billion operations on fresh blocks and maintaining bit-error rates below 0.015% even after 10,000 program/erase (P/E) cycles.
