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This paper introduces a full-chip Chemical-Mechanical Polishing (CMP) model based on a Fully Convolutional Network (FCN) to predict post-CMP nanotopography, addressing the limitations of Density Step Height (DSH) modeling. The model leverages White Light Interferometry (WLI) and Atomic Force Microscopy (AFM) data for training, enabling nanometer-scale accuracy in predicting surface unevenness. Results demonstrate a detailed full-chip CMP model, offering a faster and more resource-efficient approach to layout manufacturability verification.
Nanometer-accurate, full-chip CMP modeling is now possible with a fast, FCN-based approach that leapfrogs traditional, resource-intensive methods.
As time-to-market is crucial in the Integrated Circuit (IC) industry, speeding up layout manufacturability verifi-cation is essential. Chemical-Mechanical Polishing (CMP) plays a vital role in IC fabrication but is significantly influenced by Layout-Dependent Effects (LDE). An accurate and efficient CMP model enables design teams to correct surface unevenness before fabrication, reducing costs and accelerating the design phase. However, existing models often rely on Density Step Height (DSH) modeling, which is time-consuming for calibration and requires substantial hardware resources for fine-grained predictions. In this paper, we propose combining the advantages of two surface analysis techniques, White Light Interfer-ometry (WLI) and Atomic Force Microscopy (AFM), to train a deep learning model. This model aims to predict full-chip post-CMP nanotopography with nanometer-scale accuracy. Our deep learning model is based on a Convolutional Neural Network (CNN) and follows a two-step pipeline. The model is trained on each technique separately, resulting in a detailed full-chip CMP model.
