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This paper reviews mm-wave and sub-THz/THz oscillator designs, crucial components for future communication systems (5G, 6G+). It analyzes CMOS, SiGe, and III-V semiconductor technologies, comparing their performance based on phase noise, output power, efficiency, tunability, and stability. The review identifies key design challenges and emerging techniques, providing insights for developing robust oscillators.
Tomorrow's 6G networks hinge on overcoming the design hurdles of mm-wave and sub-THz oscillators, and this review lays out the roadmap.
This paper provides a concise yet comprehensive review of recent advancements in millimeter-wave (mm-wave) oscillators below 100 GHz and sub-terahertz (sub-THz/THz) oscillators above 100 GHz for next-generation computing and communication systems, including 5G, 6G, and beyond. Various design approaches, including CMOS, SiGe, and III-V semiconductor technologies, are explored in terms of performance metrics such as phase noise, output power, efficiency, frequency tunability, and stability. The review highlights key challenges in achieving high-performance and reliable oscillator designs while discussing emerging techniques for performance enhancement. By evaluating recent design trends, this work aims to offer valuable insights and design guidelines that facilitate the development of robust mm-wave and sub-THz/THz oscillators for future communication, computing, and sensing applications.
