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This paper introduces a theoretical framework that combines numerical solutions of Maxwell's equations with semiconductor Bloch equations to analyze nonlinear light-matter interactions in bulk semiconductors under strong-field conditions. The study reveals that the propagation of the driving laser pulse and generated harmonics significantly alters the harmonic spectra, which has implications for interpreting experimental results related to the electronic structure of materials. By enabling a self-consistent treatment of strong-field interactions, this framework bridges classical and quantum regimes, enhancing our understanding of high-order harmonic generation processes.
Propagation effects can drastically alter harmonic spectra, challenging traditional interpretations of material electronic structures.
We present a theoretical framework for self consistent treatment of nonlinear light-matter interactions in the ultra-fast strong-field regime based on numerical solution of Maxwell's equations and semiconductor Bloch equations. This framework is shown to describe high-order harmonic generation and propagation in bulk semiconductors, investigating differences in reflected and transmitted harmonic spectra due to propagation effects. We show that the propagation of the combined field of the driving laser pulse and generated harmonics in a bulk semiconductor significantly modifies the harmonic spectra, affecting interpretation of experimental results relating the transmitted harmonic spectra to the underlying electronic structure of the material. This model allows the self-consistent description of strong-field light-matter interactions in the non-perturbative regime, opening the way to explore the transition between fully classical and quantum regimes of interaction, tunneling and multiphoton regimes of material ionization, and perturbative and non-perturbative regimes of harmonic generation in bulk materials.
