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This study introduces a machine learning framework utilizing an autoencoder to efficiently model FinFET devices by compressing current-voltage characteristics into a low-dimensional latent space. By calibrating a BSIM-CMG model to generate a dataset and incorporating bias-dependent parameters, the autoencoder effectively reconstructs full I-V curves and extracts critical metrics such as threshold voltage and peak transconductance. The results indicate that this data-driven approach can achieve high accuracy with minimal training data, significantly enhancing rapid device characterization and circuit simulation processes.
Achieving high accuracy in FinFET modeling with minimal training data could revolutionize device characterization and circuit simulation.
This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET. We first calibrated a BSIM-CMG model to generate a dataset of current-voltage (ID-VG) characteristics. This data was used to train an autoencoder that compresses full I-V curves into a low-dimensional latent space, which intrinsically encodes key device physics. A key innovation is the explicit incorporation of parameter such as drain to source voltage (VDS) as an input feature, enhancing the model ability to capture bias dependent variation. The trained model successfully reconstructs full I-V curves and directly extracts critical device metrics including threshold voltage (VTH), subthreshold slope (SS), and peak transconductance (gm). This approach demonstrates that data driven compact models, built from actual characterization data, can achieve high accuracy with minimal training data, providing a powerful tool for rapid device characterization, modelling and circuit level simulation.
