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This paper introduces a low-power cache architecture that serially interconnects conventional 6T SRAM cells within a column to exploit the stacking effect for leakage current suppression. The architecture modifies the column organization and readout path to accommodate the serial topology. Simulations using Keysight ADS demonstrate reduced leakage power compared to conventional SRAM interconnection.
Stacking SRAM cells slashes leakage power without adding transistors.
This paper presents a low-power cache architecture based on the series interconnection of conventional 6-transistor static random-access memory (6T SRAM) cells. The proposed approach aims to reduce leakage power in SRAM-based cache memories without increasing the transistor count of the memory cell itself. In the proposed architecture, adjacent cells within a column are reconfigured in a serial topology, thereby exploiting the stacking effect to suppress leakage current, particularly during hold operation. This architectural modification requires corresponding changes to the addressing and sensing structure of the cache, including adjustments to the column organization and readout path. To evaluate the proposed method, transient simulations were carried out using Keysight ADS. The simulation results show that the proposed architecture reduces leakage power compared with the conventional SRAM interconnection scheme while preserving the use of standard 6T SRAM cells.
