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The paper demonstrates layer-selective conductor-insulator transitions in twisted bilayer graphene by controlling hydrogenation at fixed charge density under a strong electric field. This selectivity is achieved due to the decoupling of the two layers' electronic systems by the large twist angle, allowing independent control of their charge densities. The process is accompanied by proton transport through the bilayer, enabling the creation of configurable logic gates.
Twisted bilayer graphene enables the creation of parallel and configurable logic gates by exploiting layer-selective hydrogenation and proton transport.
Recent work investigated graphene's hydrogenation with independent control of the electric field, E, and charge density, n, in the crystal and showed that the process is controlled by n. Here, we demonstrate layer-selective conductor-insulator transitions in twisted bilayer graphene, driven by hydrogenation at fixed n under strong E. This process is accompanied by proton transport through the bilayer, enabling several parallel and configurable logic gates in the devices. Selectivity arises because the large twist angle decouples the two layers'electronic systems, enabling independent control of their charge densities. Polarisation by the field then induces a charge imbalance at fixed total n, triggering hydrogenation when one of the layers'charge densities reaches the threshold for monolayer hydrogenation. Our results introduce a new type of electrode-electrolyte interface in which electrochemical processes are controlled with two decoupled 2D electron gases, opening new design opportunities for energy and information processing devices.
