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The paper demonstrates layer-selective conductor-insulator transitions in twisted bilayer graphene via hydrogenation, controlled by an electric field at fixed charge density. This selectivity is achieved by leveraging the decoupled electronic systems of the twisted layers, allowing for independent charge density control and triggering hydrogenation in one layer when its charge density reaches a threshold. The process is accompanied by proton transport through the bilayer, enabling the creation of configurable logic gates.
Hydrogenation can be used to create layer-selective conductor-insulator transitions in twisted bilayer graphene, opening the door to novel logic gates and energy processing devices.
Recent work investigated graphene's hydrogenation with independent control of the electric field, E, and charge density, n, in the crystal and showed that the process is controlled by n. Here, we demonstrate layer-selective conductor-insulator transitions in twisted bilayer graphene, driven by hydrogenation at fixed n under strong E. This process is accompanied by proton transport through the bilayer, enabling several parallel and configurable logic gates in the devices. Selectivity arises because the large twist angle decouples the two layers'electronic systems, enabling independent control of their charge densities. Polarisation by the field then induces a charge imbalance at fixed total n, triggering hydrogenation when one of the layers'charge densities reaches the threshold for monolayer hydrogenation. Our results introduce a new type of electrode-electrolyte interface in which electrochemical processes are controlled with two decoupled 2D electron gases, opening new design opportunities for energy and information processing devices.
