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This paper reports the direct growth of crystalline spinel gamma-GaON films via nitrogen-plasma-assisted pulsed-laser deposition, overcoming challenges in synthesizing mixed-anion semiconductors. By controlling nitrogen and oxygen flux, researchers achieved phase-pure spinel GaON, distinct from monoclinic beta-Ga2O3 and disordered phases. Temperature-dependent photocurrent spectroscopy reveals a band-edge transition near 4.3 eV for crystalline gamma-GaON, enabling exploration of its wide-bandgap semiconductor properties.
A new crystalline spinel phase of GaON with a 4.3 eV bandgap is directly grown, bridging GaN and Ga2O3 for novel wide-bandgap semiconductor applications.
Mixed-anion semiconductors offer opportunities for bandgap engineering beyond conventional multication alloys, but competing phases and disorder complicate their synthesis and the identification of their electronic properties. Gallium oxynitride (GaON) could connect the technologically important GaN and Ga2O3 systems, yet establishing a clear relation between its crystal structure, composition and bandgap remains challenging. Here we report the direct growth of crystalline spinel gamma-GaON films by nitrogen-plasma-assisted pulsed-laser deposition. Varying the nitrogen and oxygen supply yields monoclinic beta-Ga2O3, predominantly disordered films and crystalline spinel GaON. Complementary diffraction, atomic-resolution microscopy and elemental analysis establish the spinel structure and nitrogen incorporation. Temperature-dependent photocurrent spectroscopy reveals a clear redshift of the crystalline gamma-GaON response, supporting assignment of a band-edge transition near 4.3 eV at room temperature. These results open opportunities to investigate mixed-anion wide-bandgap semiconductor physics and develop heterostructures.