Track synthesis, materials and catalysis as it is published.
Search papers, labs, and topics across Lattice.
This paper introduces a novel defocused direct laser ablation transfer (D-DLAT) method using a polyimide release layer to overcome limitations in micro-LED mass transfer. D-DLAT actively propels micro-LEDs via ablation shock, achieving high-speed transfer with sub-micrometer precision and a 50 $\unicode{x03BC}$m gap tolerance. The method enables full selectivity for complex patterning and array repitching, paving the way for scalable, high-yield micro-LED display manufacturing.
Ablation shock propels micro-LEDs with sub-micrometer precision and 50 $\unicode{x03BC}$m gap tolerance, shattering previous mass transfer bottlenecks.
Micro light-emitting diodes (micro-LEDs) offer superior performance for next-generation displays, yet their scalable manufacturing is severely bottlenecked by the mass transfer process from donor to receiver substrates. The existing laser-induced forward transfer (LIFT) methods are restricted by low throughput, limited selectivity, and long reaction times. In this study, we introduce a novel defocused direct laser ablation transfer (D-DLAT) method utilizing polyimide as a dynamic release layer. Whereas most indirect laser transfer methods trigger chip release followed by passive descent toward the receiver, D-DLAT directly ablates the release layer to actively propel the small-sized chips towards the receiver via ablation shock. By optimizing the ablation profiles and scanning paths, this method achieves high-speed transfer with significantly enhanced precision and robustness. We demonstrate the successful transfer of micro-LEDs ranging from 600 $\unicode{x03BC}$m down to 35 $\unicode{x03BC}$m in size, with a minimum reported placement error of less than 1 $\unicode{x03BC}$m, and a critical transfer gap of up to 50 $\unicode{x03BC}$m. Furthermore, the D-DLAT approach enables full selectivity, facilitating complex patterned transfers and array repitching operations that are essential for full-color display integration. Our findings indicate that D-DLAT effectively overcomes the fundamental limitations of current transfer technologies, demonstrating substantial potential for the scalable and high-yield manufacturing of advanced micro-LED displays. Ultimately, D-DLAT establishes a robust paradigm for the high-speed manipulation and heterogeneous integration of micro-optoelectronic devices, extending its profound implications beyond displays to the broader landscape of advanced micro-assembly and flexible electronics.