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The authors construct a comparative analytical framework using compact electro-thermal modeling to analyze state-dependent programming and readout dynamics in disc-type phase-change memory (PCM) devices. This analysis uncovers the electro-thermal confinement mechanisms in ultra-thin PCM geometries, addressing fundamental scaling and efficiency bottlenecks in analog in-memory computing. The resulting physical insights provide actionable architectural design rules to optimize multi-level cell precision and energy scaling for next-generation neuromorphic hardware.
Ultra-thin disc architectures bypass traditional thermal cross-talk and energy scaling limits in phase-change memory, providing a blueprint for dense, high-endurance analog compute arrays.
Disc-type phase-change memory is a promising device architecture for analog in-memory computing, enabled by the unique physical properties of ultra-thin phase-change materials and the device geometry. In this study, we develop a comparative analytical framework using compact electro-thermal models to examine the state dependent readout and programming behavior of these devices. The framework provides insight into the fundamental physical mechanisms responsible for their enhanced functionality and highlights promising directions for further device optimization and performance improvement.