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We investigate coherent phonon generation in tellurium under ultrafast laser excitation near the band gap, challenging the conventional thermalized carrier population model. Systematic measurements and first-principles calculations reveal that the coherent amplitude of the fully symmetric $A_1$ mode exhibits weak dependence on excitation wavelength across the band gap, contradicting expectations. The observed spectral dependence is accurately reproduced by a transition-resolved prethermal force model, suggesting excited transition state lifetimes on the order of a few femtoseconds.
Ultrafast phonon generation in semiconductors is driven by transition selectivity, not just total carrier density.
Ultrafast laser excitation of carriers in semiconductors often results in the creation of fully symmetric coherent optical phonons, typically understood in terms of a thermalized transient carrier population. We test this understanding with systematic measurements and first-principles calculations of the photon-energy dependence of ultrafast-laser-driven coherent phonon generation in tellurium, using excitation wavelengths around the electronic band gap. We observe that, contrary to the expectations of models assuming a thermalized carrier population, the coherent amplitude of the fully symmetric $A_1$ mode changes only weakly when tuning wavelength across the band gap. The measured spectral dependence is instead reproduced by a transition-resolved prethermal force weighted by optical matrix elements and band- and momentum-dependent $A_1$ deformation potentials. Fitting this model to the data yields an excited transition state lifetime of a few femtoseconds. These results identify transition selectivity, rather than a thermalized total carrier density, as a key factor controlling coherent-phonon generation in semiconductors excited near a band gap.