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Position-, time-, and angle-resolved photoemission spectroscopy on twisted bilayer graphene reveals a novel "ghost-Fano" exciton within the hybridization-induced band gap, arising from destructive interference of excitonic channels. The study also demonstrates distinct electronic temperatures in the two graphene layers, attributed to ultrafast interlayer energy redistribution driven by an interlayer electric field. These findings offer direct insight into exciton and carrier dynamics in tBLG, particularly the role of interlayer coupling and doping asymmetry.
A novel "ghost-Fano" exciton is directly observed within the band gap of twisted bilayer graphene, driven by destructive interference between excitonic channels.
Twisted bilayer graphene (tBLG) on H-intercalated SiC (twist angle of $9 \pm 1^{\circ}$) is studied by position\mbox{-}, time\mbox{-}, and angle-resolved photoemission spectroscopy (ARPES). Both graphene layers are hole doped, with a Dirac-point offset of 30~meV. Time-resolved ARPES near the van Hove singularity reveals a spectral feature within the hybridization-induced band gap, together with excited electrons in the conduction band. The in-gap feature exhibits distinct dynamics, and its binding energy and $k$-space location are consistent with the proposed non-hydrogenic ``ghost-Fano'' exciton arising from destructive interference between two nearly degenerate excitonic channels. Near the Dirac points, the twist separates the largely layer-polarized Dirac cones in momentum space, providing direct layer selectivity. We find markedly different peak electronic temperatures in the two graphene layers, even though their subsequent cooling dynamics are very similar. We attribute this to an ultrafast interlayer redistribution of electronic energy, driven by an interlayer electric field that arises from the different doping in the layers.