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We demonstrate near-ideal, field-free superconducting diode behavior in room-temperature-grown Mo$_2$N/FePt bilayers, attributing the nonreciprocity to polarity-dependent flux entry and vortex motion thresholds induced by remanent FePt stripe domains. Micromagnetic simulations confirm periodic stray-field modulation and asymmetric field enhancement at stripe edges, leading to a significant asymmetry in dissipation up to 85% diode efficiency in thinner bilayers. The nonreciprocity is continuously tunable via magnetic preparation angle and reversibly switched by magnetic field excursions, validating edge-controlled flux entry as a promising avenue for high-efficiency superconducting diodes.
Field-free superconducting diodes achieve 85% efficiency by exploiting engineered magnetic domain structures to control vortex motion.
Near-ideal, field-free superconducting diode behavior is demonstrated in room-temperature-grown Mo$_2$N/FePt bilayers. The response is consistent with remanent FePt stripe domains producing polarity-dependent thresholds for flux entry and vortex motion. Micromagnetic simulations reveal a periodic stray-field modulation across the stripes and asymmetric field enhancement near their ends at the bridge edges. One current polarity remains nearly dissipationless up to a sizable fraction of the estimated depairing current, whereas the opposite polarity develops dissipation at much lower current, yielding diode efficiencies up to approximately 85% in the thinner bilayer. The nonreciprocity can be continuously tuned by the in-plane magnetic preparation angle and reversibly switched by reverse-field excursions through the hysteretic reversal of the FePt layer. These results support edge-controlled flux entry and vortex motion as a route to high-efficiency superconducting diodes.