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We demonstrate that inserting a conductive La$_{0.67}$Sr$_{0.33}$MnO$_3$ buffer layer into BaTiO$_3$ films grown on MgO substrates can reverse the dominant strain state from compressive to tensile. This strain reversal, coupled with interfacial charge redistribution, induces an unconventional ferroelectric phase sequence (paraelectric $\rightarrow$ orthorhombic $\rightarrow$ monoclinic) with in-plane and tilted polarization components. The findings highlight the critical role of buffer layers in precisely controlling ferroelectric symmetry and polarization topology for advanced oxide heterostructures.
A simple buffer layer dramatically alters BaTiO$_3$ ferroelectric phases by reversing substrate-induced strain and introducing built-in electric fields.
Controlling ferroelectric phase symmetry through strain engineering is crucial for tailoring polarization topology and functional properties in oxide-based devices. Here, we show that a thin conductive buffer layer can override substrate-induced strain in BaTiO$_3$ (BTO) films on MgO. Although the lattice parameter of MgO(001) would be expected to induce tensile misfit strain, in 500~nm BaTiO$_3$ films the thermal-expansion mismatch dominates, resulting in effective compressive stress upon cooling. Inserting a 50-nm La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) buffer layer reverses the effective strain state from compressive to tensile. Using temperature-dependent polarized Raman spectroscopy, X-ray diffraction, and piezoresponse force microscopy, we reveal an unconventional phase sequence upon cooling: paraelectric $\rightarrow$ orthorhombic ($\textit{aa}$-phase, $\sim$407 K) $\rightarrow$ monoclinic ($\textit{r}$-phase, $\sim$300-345 K), characterized in-plane and tilted polarization components. The LSMO layer not only serves as a bottom electrode but also modifies the strain state, while interfacial charge redistribution induces a built-in electric field, evidenced by self-polarization and asymmetric PFM hysteresis. These findings highlight the critical role of conductive buffer layers in controlling ferroelectric symmetry and enabling oxide heterostructures with tailored polarization textures for low-power spintronics, tunable microwave devices, and neuromorphic computing.