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We demonstrate reversible dimensionality control of topological defects in polar epitaxial tungsten trioxide ($\text{WO}_3$) by expanding nanoscale domain walls into three-dimensional functional regions. This interconversion is achieved by leveraging the conducting, non-polar domain walls to adopt the parent-phase structure, which then expands into adjacent polar domains under localized heating induced by an alternating electric field. This work offers a new paradigm for reconfigurable oxide electronics by enabling reversible spatial control to switch between mutually exclusive properties of domains and domain walls.
Nanoscale domain walls in polar oxides can be reversibly expanded into 3D functional regions, unlocking new possibilities for reconfigurable electronics.
Domain walls in ferroic crystals are topological defects with a symmetry distinct from the domain interior, allowing them to display functionalities that are otherwise forbidden in the host material. Despite their unique properties, domain walls are strictly confined to two-dimensional interfaces, which hinders unveiling their true nature and limits their applicability. Here, we demonstrate reversible dimensionality control by expanding nanoscale domain walls into three-dimensional functional regions in polar epitaxial tungsten trioxide ($\text{WO}_3$). This domain-wall-to-domain interconversion is enabled by the conducting, non-polar domain walls adopting the parent-phase structure. An alternating electric field applied through a scanning probe tip induces localized heating, which expands this domain-wall phase into the adjacent polar domains. This approach enables reversible spatial control to switch between mutually exclusive properties of domains (polarity) and domain walls (conductivity), offering a new paradigm for reconfigurable oxide electronics.