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This paper details the pulsed laser deposition of HoCo$_2$ thin films on Si, achieving smooth surfaces and interfaces with subnanometer roughness. The films exhibit a reproducible ferrimagnetic transition at 77 K, retaining bulk magnetic ordering but displaying a continuous, second-order-like transition and significantly enhanced coercivity compared to bulk material. X-ray photoelectron spectroscopy confirms the preservation of the local electronic environment and occupied electronic structure.
HoCo$_2$ thin films grown by PLD retain ferrimagnetic ordering and exhibit a striking increase in coercive field while transitioning to a continuous magnetic phase.
We report the growth and physical properties of HoCo$_2$ thin films on Si substrate by pulsed laser deposition. Well-defined Kiessig fringes in the x-ray reflectivity data yield a film thickness of $35 \pm 1$~nm and demonstrate smooth film surface and interface profiles. Atomic force microscopy confirms the high morphological quality of the films, revealing subnanometer surface roughness of $\sim$170~pm. Two independently prepared films exhibit a reproducible ferrimagnetic transition at $T_{\mathrm{C}}=77\pm3$~K, demonstrating retention of the characteristic magnetic ordering of bulk HoCo$_2$. However, the absence of resolvable thermal hysteresis indicates a predominantly continuous, second-order like transition in the films, in contrast to the first-order transition of bulk HoCo$_2$. At 5~K, the films exhibit clear magnetic hysteresis with a coercive field of $\sim$600~Oe, substantially larger than the negligible coercivity of bulk HoCo$_2$. X-ray photoelectron spectroscopy reveals comparable Ho $4d$ and Co $2p$ core-level line shapes and broadly similar valence-band spectra for the bulk and film, indicating preservation of the essential local electronic environment and occupied electronic structure.