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The authors investigate the nanoscale electronic coupling and charge-transfer landscape of graphene grown on Ge(001)/Si(001) by combining multiscale spectroscopy, density functional theory (DFT), and machine-learning-assisted classification of scanning tunneling spectroscopy (STS) data. Resolving this interface is critical for engineering silicon-compatible 2D electronics and settling longstanding contradictions regarding graphene's doping polarity on germanium. The analysis reveals that substrate nanofaceting creates spatially heterogeneous coupling—from quasi-freestanding to strongly coupled nanoribbon-like regimes—while interfacial oxidation drives a complete polarity flip from n-type to p-type doping.
Interfacial oxidation—not substrate morphology—is the hidden culprit flipping graphene on germanium from n-type to p-type, resolving a persistent controversy in 2D semiconductor integration.
Understanding and controlling charge transfer at graphene-semiconductor interfaces is essential for the integration of two-dimensional materials into silicon-compatible technologies. Here, we combine ultraviolet photoelectron spectroscopy (UPS), Kelvin probe force microscopy (KPFM), angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS) and density functional theory (DFT) to resolve work-function modulation and electronic coupling in graphene grown on Ge(001)/Si(001). UPS and KPFM reveal a spatially non-uniform work-function landscape correlated with the nanofaceted morphology of the substrate. ARPES and DFT calculations for the pristine interface consistently indicate n-type doping and electron transfer from Ge to graphene. In contrast, modeling of the oxidized interface predicts a reversal to p-type doping, providing a plausible explanation for the different doping polarities reported in the literature. Machine-learning-assisted classification of the STS data resolves distinct local electronic regimes, ranging from nearly free-standing graphene on nanofacet tops to more strongly coupled inter-facet regions and nanoribbon-like regions with distinct local electronic responses. By identifying the mechanisms governing local graphene-substrate interactions and charge transfer, our study provides guidelines for tailoring the synthesis process and minimizing defect formation during delamination. These insights support the production of high-quality graphene layers for electronic devices and for transfer as protective coatings for air-sensitive materials.