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This work establishes a multiscale simulation pipeline bridging density functional theory with Non-Equilibrium Green's Function (NEGF) transport to evaluate nanoscale field-effect transistors based on 2D ferroelectric monolayers. Accurately modeling these 2D monolayers is critical to overcoming the nanoscale physical scaling limits of conventional 3D ferroelectrics in low-power neuromorphic architectures. Applying the model to monolayer Indium Phosphide, the framework couples an interpolated polarization-dependent Hamiltonian into a self-consistent Poisson-NEGF solver, recovering macroscopic hysteresis loops and memory windows purely ab initio without empirical parameterization.
Nanoscale ferroelectric memory windows can now be predicted directly from first principles, eliminating empirical guesswork to accelerate the discovery of 2D materials for neuromorphic computing.
Ferroelectric materials are highly attractive for low-power, high-speed electronics and emerging neuromorphic computing architectures. However, the severe physical scaling limits of conventional bulk (3D) ferroelectrics at the nanoscale have shifted attention towards two-dimensional (2D) ferroelectric monolayers. Accurate device-level performance predictions are essential to accelerate the experimental testing and screening of these novel materials. In this work, we present a multiscale simulation framework that bridges first-principles density functional theory with Non-Equilibrium Green's Function (NEGF) transport calculations. Using a 2D Indium Phosphide monolayer as a case study, our approach leverages a continuously interpolated, polarization-dependent Hamiltonian embedded within a self-consistent Poisson-NEGF solver. The model captures the dynamic interplay between ion movement and electronic transport, naturally reproducing macroscopic hysteresis loops and memory windows without empirical parameters. This predictive pipeline provides a computationally efficient tool to evaluate and optimize next-generation 2D ferroelectric field-effect transistors.