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The authors achieve the first isolation of an individual silicon C-center and couple it to a nanophotonic crystal cavity to drive single-photon emission in the telecom L-band. Operating at the wavelength of minimum transmission loss in standard optical fibers overcomes long-distance attenuation bottlenecks while retaining monolithic silicon-photonic compatibility. The cavity-enhanced emitter achieves a minimum Purcell factor of 33 with a fivefold reduction in excited-state lifetime, delivering high-purity single-photon emission with an uncorrected $g^{(2)}(0) = 0.23$.
Silicon's elusive C-center has finally been isolated at the single-emitter level, unlocking native, cavity-enhanced single-photon emission directly in telecommunications' lowest-loss optical band.
Monolithic integration of single-photon sources into silicon photonics offers a compelling solution for realizing scalable quantum telecommunication architectures. Among the candidate silicon color centers, the C-center features a zero-phonon emission in the telecom L-band, corresponding to the spectral window of minimum transmission loss in optical fibers. Despite this advantage, isolating single C-centers has remained an unrealized challenge in solid-state quantum optics. In this work, we report the isolation of a single silicon C-center. We enhance the spontaneous emission rate of the zero-phonon line by coupling the single emitter to a nanophotonic crystal cavity, observing a fivefold reduction in the excited-state lifetime compared to bulk conditions, which corresponds to a Purcell factor lower bound of 33. Second-order autocorrelation measurements confirm single-photon emission from the investigated defect, obtaining an optical purity of $g^{(2)}(0) = 0.23$ without background correction. Our results establish a native telecom L-band quantum light source in silicon, laying the foundation for ultra-low-loss and long-distance quantum applications.