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To overcome photon extraction bottlenecks in high-index silicon carbide, the authors engineered a heterogeneous silicon-on-silicon-carbide (Si-on-SiC) platform that evanescently couples silicon nanocavities to shallow vanadium dopants. The interface achieves Purcell-enhanced single-photon emission in the telecom O-band with lifetimes shortened to 109 ns, 50 MHz transient spectral hole burning linewidths, and 95% charge-state recovery using an integrated 905 nm repump. By leveraging commercial 4H-SiC and standard silicon photonics, this approach eliminates the need for direct SiC etching while establishing an efficient fiber-coupled spin-photon node.
Telecom-wavelength quantum memories no longer require difficult direct fabrication in silicon carbide: evanescent coupling through foundry-compatible silicon nanocavities achieves single-photon emission with 109 ns optical lifetimes on a single-fiber interface.
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.