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The authors optimize InAs/InAlGaAs/InP quantum dot laser active regions grown via molecular-beam epitaxy tailored for O-band telecommunication emission. Long-wavelength quantum dot lasers often degrade under data-center thermal loads because poor energy separation between ground and excited states triggers severe thermal carrier leakage. By engineering carrier capture and confinement, the finalized architecture achieves significant ground-to-excited state energy separation, effectively suppressing carrier escape even at elevated operating temperatures.
Thermal carrier leakage in O-band laser emitters can be suppressed at elevated temperatures by maximizing ground-to-excited state energy separation in MBE-grown InAs/InAlGaAs/InP quantum dots.
The O-band telecommunication spectral range combines minimal chromatic dispersion with low transmission loss, making it highly suitable for optical communications. Semiconductor telecom lasers utilizing low-dimensional active regions, such as quantum dots, offer low threshold power and high thermal stability. However, long-wavelength quantum dot emitters often suffer from thermal carrier escape through excited states when the energy separation between the ground and excited states is insufficient. Here we demonstrate the optimization of InAs quantum dot emitters grown on InP by molecular-beam epitaxy for O-band laser active regions. By optimizing the design for better carrier capture efficiency and tuning the emission wavelength to the O-band, we show ways of improving the carrier confinement. Absorption spectroscopy on the finalized structure confirms substantial energy separation between the quantum dot ground and excited states, effectively suppressing thermal carrier escape even at elevated temperatures. These results highlight critical design for improving carrier capture and retention in long-wavelength quantum dot lasers.