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To directly quantify interfacial electrostatics in operating oxide heterojunctions, the authors correlated operando scanning transmission electron microscopy electron-beam-induced current (STEM-EBIC) with 4D-STEM on an electron-transparent LSMO/NSTO Schottky junction. The nanoscale field reconstructions revealed pronounced nonlinear decay across the depletion region and substantial field penetration into the LSMO layer, providing direct experimental evidence of non-classical interfacial electrostatics. This operando multimodal platform establishes an empirical link between local interfacial charge distributions and macroscopic rectifying transport to guide future oxide device engineering.
Direct nanometer-scale operando field mapping reveals that oxide Schottky junctions violate textbook depletion theory, exhibiting severe nonlinear decay and unexpected field penetration into the conductive layer.
Understanding local electric fields at oxide interfaces is essential for linking interfacial electrostatics to device functionality, yet conventional electrical measurements infer these fields only indirectly. Here, we combine operando scanning transmission electron microscope electron-beam-induced current (STEM-EBIC) with four-dimensional-STEM (4D-STEM) to quantitatively reconstruct the bias-dependent electric field spatial distribution across an oxide Schottky junction at nanometer scale. Using La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/NSTO) as a model system, we fabricate an electron-transparent junction on a MEMS biasing platform and verify that it retains the rectifying transport behavior. STEM-EBIC provides complementary information addressing several key limitations in quantitative 4D-STEM field mapping for heterojunctions. The reconstructed electric field profiles show a pronounced nonlinear decay within the depletion region and an extended penetration into the LSMO. These results directly reveal the deviations of oxides Schottky junction from the ideal conventional Schottky depletion model, providing experimental signatures of non-classical interfacial electrostatics. Our correlative approach enables quantitative nanoscale electric field mapping in operating oxide heterojunctions, providing a basis for linking interfacial electrostatics to macroscopic transport and guiding oxide devices design.