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First principles calculations reveal $\beta$-TeO$_3$ as an n-type wide-gap semiconductor exceeding 3 eV with ultrahigh work functions up to ~8 eV, making it a promising candidate for advanced electronic and optoelectronic devices. Interstitial impurities and substitutional F act as shallow donors, while O vacancies, particularly on surfaces, can act as compensating defects that reduce work functions. Precise control of O chemical potential is crucial to suppress surface O-vacancy formation and maintain the material's exceptional electronic properties for applications like hole injection/extraction layers and transparent electrodes.
Ultrahigh work functions exceeding 8 eV are predicted for $\beta$-TeO$_3$, a wide-gap n-type semiconductor, offering a new material frontier for high-performance optoelectronics.
The exploration of next-generation wide-gap semiconductors with extreme work functions is highly desirable for the continued advancement of electronic and optoelectronic devices. By using first principles calculations, we show that \b{eta}-TeO3, with a wide band gap exceeding 3 eV, emerges as a promising n-type semiconductor exhibiting ultrahigh work functions of up to ~8 eV. Intentionally or unintentionally incorporated interstitial H, Li, Na, Cu, Mg, and Zn impurities and substitutional F impurities are identified as shallow donors, whereas O vacancies act as minor carrier-compensating defects that locally trap electrons at neighbouring Te sites. The work function is evaluated across a series of low-index nonpolar surfaces. The presence of ordered O vacancies is energetically favoured on these surfaces and tends to reduce the corresponding work functions. These findings underscore the significance of precise control over the O chemical potential to suppress surface O-vacancy formation, thereby preserving the exceptional electronic performance of \b{eta}-TeO3 associated with ultrahigh work functions. Collectively, the results highlight the potential of \b{eta}-TeO3 for hole injection/extraction/transport layers as well as transparent electrodes for applications such as light-emitting devices and photovoltaic cells, while providing useful guidance on carrier doping and surface tuning for these practical applications through elucidating the effects of the point-defect and surface configurations on the electronic properties.