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This study investigates the thermal stability and structural ordering of 750 nm thick Co$_2$MnAl (CMA) films on MgO and Si substrates, crucial for scaling spintronic applications beyond ultrathin junctions. Optimized B2 ordering is achieved on MgO at 600 $^\circ$C, while Si substrates exhibit diffusion-driven disordering and degradation above 500 $^\circ$C due to interfacial silicide formation and voiding. Despite Mn-poor stoichiometry, the films maintain significant saturation magnetization, defining processing windows for CMOS-compatible integration.
Thick Co$_2$MnAl films degrade significantly on Si above 500 $^\circ$C due to interdiffusion, but maintain robust magnetization on MgO, enabling new volumetric spintronic applications.
While most studies on Co$2$MnAl (CMA) focus on the ultrathin regime for spintronic junctions, applications scaling with magnetic volume--such as Anomalous Nernst Effect (ANE) energy harvesters, integrated power inductors, and magnetic MEMS--require significantly thicker films. In this work, 750 nm thick CMA films were grown on MgO (001) and Si substrates to establish a roadmap for their thermal integration. Structural analysis reveals that B2 ordering is optimized on MgO at 600 $^\circ$C, which is important for functional devices. In contrast, samples on Si substrates exhibit a disorder transition toward the A2 phase, closely linked to diffusion-driven degradation processes. Above 500 $^\circ$C, Si interdiffusion into the Heusler layer triggers the formation of interfacial silicides and Kirkendall voids, leading to microcracking, electrical resistivity jumps, and a final fully disordered A2 phase. Despite the Mn-poor stoichiometry (Co$2.25$Mn$0.7$Al$1.05$), the films maintain a robust saturation magnetization of ~600 emu/cm$^3$, consistent with recent theoretical models for off-stoichiometric Heusler alloys. These results define the processing windows for integrating thick CMA layers into multifunctional CMOS-compatible platforms.