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This paper details the development of a low-noise apparatus capable of measuring the acousto-electric effect (AEE) across a temperature range from room temperature down to liquid nitrogen. The setup utilizes bulk acoustic waves excited by a lithium niobate actuator and has been validated by observing carrier-type-dependent AEE signals in doped silicon, which exhibit a quadratic dependence on driving voltage and a monotonic increase with temperature. This instrument provides a novel capability for investigating the AEE and related phenomena in various materials at cryogenic temperatures.
A new acousto-electric effect measurement apparatus unlocks cryogenic temperature studies, revealing temperature-dependent carrier dynamics in doped silicon.
We have developed an apparatus for the measurement of the acousto-electric effect (AEE) from room temperature to liquid nitrogen temperatures. The AEE is excited by bulk acoustic waves (BAWs) for which a lithium niobate piezoelectric actuator is employed. A very low background noise level is realized through careful electrical and mechanical design of the setup. The validity of the setup is tested by measuring the AEE in heavily doped P-type and N-type silicon. The opposite sign of the AEE signal was seen for both samples, showing dependence of the signal on the type of charge carrier being dragged by acoustic waves. The signal showed quadratic dependence on the driving voltage, which is consistent with the AEE literature. Further, a temperature dependence of the AEE signal was measured, which exhibits a monotonic increase with a rise in temperature. The ability to probe the AEE in bulk samples at low temperatures makes this setup a promising tool to investigate the AEE and related phenomena in different materials at cryogenic temperatures.