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This paper integrates layered spin-crossover (SCO) metal-organic frameworks (MOFs) into nanodevices to actively control the electronic properties of 2D quantum materials. Exploiting the strain generated by light-induced spin transitions in the MOF, the researchers demonstrate selective modulation of conductivity in graphene, induce and tune magnetic hysteresis in CrSBr spin-valves, and alter the superconducting critical current and transition temperature in NbSe2. These findings establish SCO MOFs as molecular switches for strain-mediated control of diverse electronic and magnetic functionalities in 2D materials.
Light-induced molecular strain from SCO MOFs unlocks non-volatile magnetic memory and tunable superconductivity in 2D quantum materials.
Metal-organic frameworks (MOFs) are widely explored for gas separation, catalysis or energy storage, yet their integration with other electronically functional materials remains largely unexplored. Here, we integrate the layered Hofmann-type spin-crossover (SCO) MOF {FeII(pyS2Et)2[PtII(CN)4]} into electrical nanodevices to control the properties of two-dimensional (2D) quantum materials. Our molecular approach exploits the stimuli-responsive nature of SCO layered materials as switchable building blocks. We demonstrate selective modulation of the electronic transport in van der Waals heterostructures interfacing SCO with 2D quantum materials (few-layer graphene, magnetic CrSBr, superconducting NbSe2) through the strain induced via thermal and light-induced spin transitions. In graphene, the conductivity is selectively switched by light. In spin-valves based on CrSBr bilayers, the MOF triggers magnetic hysteresis (absent in pristine CrSBr) and enables tunable non-volatile zero-field memory. In NbSe2, light modulates the superconducting critical current and transition temperature. These results establish layered stimuli-responsive SCO MOFs as active molecular control elements for 2D quantum materials, providing a route to strain-mediated control of electronic, magnetic, and superconducting functionalities and extending MOF-based architectures beyond traditional porous-matter applications towards multifunctional electronics and spintronics.