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Background Silicon photo-multipliers (SiPMs) suffer from several important limitations, including long recovery time, dead-space losses caused by surface quenching resistors, limited photon detection efficiency (PDE), and saturation effects under high particle flux conditions. These drawbacks significantly restrict detector performance in high-rate timing applications, radiation monitoring systems, and modern scintillation detectors. Methods Novel MAPD structures employing artificial potential micro-wells and intrinsic micro-channel recovery mechanisms were developed using silicon epitaxial technology. Electrical and optical properties of the devices were experimentally investigated through capacitance-voltage measurements, PDE analysis, and recovery-time characterization. Optimized thin-film bilayers of silicon nitride (Si 3 N 4 ) and silicon dioxide (SiO 2 ) were further implemented as anti-reflection coatings to maximize quantum efficiency (QE). Results The proposed MAPD structure demonstrated substantial improvements compared to conventional structures. The developed devices achieved nearly 100% photosensitive surface coverage, pixel densities up to 2.8 × 10 4 pixels/mm 2 , and PDE approaching 40%. Experimental investigations showed that the recovery time was reduced from approximately 300 μs to 40 ns, corresponding to an improvement factor of approximately 7.5 × 10 3 . Conclusions The obtained results demonstrate that optimized electric-field engineering combined with intrinsic micro-channel recovery mechanisms significantly improves both PDE and detector recovery dynamics. The proposed structures represent promising candidates for next-generation high-rate silicon photo-detectors intended for fast timing systems, TOF-PET, scintillation detectors, and high-energy physics experiments.